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| Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 20.00.5 Unit: mm 3.30.2 5.00.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25C) Ratings -180 -180 -5 -25 -15 150 3.5 150 -55 to +150 Unit V V V A 26.00.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.00.5 2.5 2.00.3 3.00.3 1.00.2 2.70.3 0.60.2 5.450.3 10.90.5 1 2 3 A W C C 1:Base 2:Collector 3:Emitter TOP-3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = -180V, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -20mA VCE = -5V, IC = -1A VCE = -5V, IC = -8A VCE = -5V, IC = -8A IC = -10A, IB = -1A VCE = -5V, IC = - 0.5A, f = 1MHz VCB = -10V, IE = 0, f = 1MHz 20 450 20 60 20 -1.8 -2.5 V V MHz pF 200 min typ max -50 -50 Unit A A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 2.0 1.5 3.0 1 Power Transistors PC -- Ta 200 2SB1317 IC -- VCE -24 TC=25C -20 IB=-1000mA -800mA -700mA -600mA -500mA -400mA -300mA -200mA -8 -150mA -100mA -4 -50mA -24 VCE=-5V IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 150 Collector current IC (A) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) (1) -18 25C TC=-25C -12 100C -16 100 -12 50 -6 (2) 0 0 20 40 (3) 0 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 0 0 -1 -2 -3 -4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 IC/IB=10 25C TC=100C -1 -25C 1000 hFE -- IC VCE=-5V 1000 fT -- IC VCE=-10V f=1MHz TC=25C Forward current transfer ratio hFE -3 300 TC=100C 100 -25C 30 25C Transition frequency fT (MHz) -10 -30 -100 300 100 - 0.3 30 - 0.1 10 10 - 0.03 3 3 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100 1 - 0.1 - 0.3 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 Area of safe operation (ASO) -100 IE=0 f=1MHz TC=25C -30 ICP IC 100ms -3 DC -1 Non repetitive pulse TC=25C t=10ms Collector output capacitance Cob (pF) 3000 Collector current IC (A) -3 -10 -30 -100 -10 1000 300 100 - 0.3 - 0.1 - 0.03 30 10 -1 - 0.01 -1 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1317 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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